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| inchange semiconductor product specification silicon npn power transistors 2SD1691 description ? ? with to-126 package ? complement to type 2sb1151 ? low saturation voltage ? high total power dissipation:p t =1.3w ? large current capability and wide soa applications ? dc-dc converter ? driver of solenoid or motor pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 5 a i cm collector current-peak 8 a i b base current 1 a t a =25 ?? 1.3 p d total power dissipation t c =25 ?? 20 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD1691 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =2.0a ;i b =0.2a 0.3 v v besat base-emitter saturation voltage i c =2.0a ;i b =0.2a 1.2 v i cbo collector cut-off current v cb =50v; i e =0 10 | a i ebo emitter cut-off current v eb =7v; i c =0 10 | a h fe-1 dc current gain i c =0.1a ; v ce =1v 60 h fe-2 dc current gain i c =2a ; v ce =1v 100 400 h fe-3 dc current gain i c =5a ; v ce =1v 50 t on turn-on time 0.2 1.0 | s t stg storage time 1.1 2.5 | s t f fall time i c =2a; i b1 =-i b2 =0.2a r l =5.0 |? ;v cc ?? 10v 0.2 1.0 | s ? h fe-2 classifications m l k 100-200 160-320 200-400 inchange semiconductor product specification 3 silicon npn power transistors 2SD1691 package outline fig.2 outline dimensions |
Price & Availability of 2SD1691
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